(1). In a P-N junction

• (a). the potential of P&N sides becomes higher alternately
• (b). the P side is at higher electrical potential than N side
• (c). the N side is at higher electric potential than P side
• (d). both P&N sides are at same potential
• (e). None of these

(2). Barrier potential of a P-N junction diode does not depend on

• (a). doping density
• (b). diode design
• (c). temperature
• (d). forward bias
• (e). None of these

(3). A n-p-n transistor conducts when

• (a). both collector and emitter are negative with respect to the base
• (b). both collector and emitter are positive with respect to the base
• (c). collector is positive and emitter is negative with respect to the base
• (d). collector is positive and emitter is at same potential as the base
• (e). None of these

(4). Reverse bias applied to a junction diode

• (a). increases the minority carrier current
• (b). lowers the potential barrier
• (c). raises the potential barrier
• (d). increases the majority carrier current
• (e). None of these

(5). In semiconductors at a room temperature

• (a). the conduction band is completely empty
• (b). the valence band is partially empty and the conduction band is partially filled
• (c). the valence band is completely filled and the conduction band is partially filled
• (d). the valence band is completely filled
• (e). None of these

• (a). 1
• (b). 2
• (c). 3
• (d). 4
• (e). None of these

• (a). 2v when diode is forward biased
• (b). zero when diode is forward biased
• (c). V when diode is reverse biased
• (d). V when diode is forward biased
• (e). None of these

• (a). 6
• (b). 48
• (c). 24
• (d). 12
• (e). None of these

• (a). XOR gate
• (b). AND gate
• (c). NAND gate
• (d). OR gate
• (e). None of these

• (a). 1
• (b). 2
• (c). 3
• (d). 4
• (e). None of these